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  Datasheet File OCR Text:
 Switching Diodes
MA2B190
Silicon epitaxial planar type
0.56 max.
Unit : mm
For switching circuits
1
I Features
* Low forward dynamic resistance rf * Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 100 225 500 200 -55 to +200 Unit V V mA mA mA C C
1st Band 2nd Band
2 1.95 max.
1: Cathode 2: Anode JEDEC: DO-35
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Forward dynamic resistance Reverse recovery time*3 VF VR Ct rf*1 rf*2 trr VR = 15 V VR = 30 V VR = 35 V, Ta = 150C IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 3 mA, f = 30 MHZ IF = 3 mA, f = 30 MHZ IF = 10 mA, VR = 1 V Irr = 0.1 * IR, RL = 100 35 4 2.5 3.6 0.2 Conditions Min Typ Max 0.005 0.01 100 1.2 Unit A A A V V pF ms
Note) 1. Rated input/output frequency: 2.5 MHz 2. *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit
Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 1 V RL = 100 Output Pulse
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2B190 White White
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
24 min.
4.5 max.
24 min.
COLORED BAND INDICATES CATHODE
1
MA2B190
IF V F
103
Switching Diodes
VF Ta
1.0
103
IR V R
102
Forward current IF (mA)
0.8
102
Ta = 150C
Forward voltage VF (V)
10
0.6
3 mA
Reverse current IR (nA)
IF = 10 mA
10
100C
1
Ta = 150C 100C 25C
1 mA 0.4 0.1 mA 0.2
1
10-1
- 20C
10-1
25C
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
0 -40
10-2
0
40
80
120
160
0
10
20
30
40
50
Forward voltage VF (V)
Ambient temperature Ta (C)
Reverse voltage VR (V)
Ct VR
6 100
r f IF
Forward dynamic resistance rf ()
f = 1 MHz Ta = 25C f = 30 MHz
Terminal capacitance Ct (pF)
5
10
4
3
1
2
0.1
1
0
0
10
20
30
40
50
60
0.01 0.1
0.3
1
3
10
30
100
Reverse voltage VR (V)
Forward current IF (mA)
2


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